Dominant rate process of silicon surface etching by hydrogen chloride gas
نویسندگان
چکیده
منابع مشابه
Gas-Surface Dynamics and Profile Evolution during Etching of Silicon.
Scattering of energetic F atoms on a fluorinated Si surface is studied by molecular beam methods. The energy transfer closely follows hard-sphere collision kinematics. Energy and angular distributions of unreacted F atoms suggest significant multiple-bounce scattering in addition to single-bounce scattering and trapping desorption. An empirical model of the atom-surface interaction dynamics is ...
متن کاملSurface chemistry during plasma etching of silicon
Angle-resolved x-ray photoelectron spectroscopy ( X P S ) and laserinduced thermal desorption (LD), combined with laser-induced fluorescence (LIF) detection, were used to study the etching of olycrystalline Si (poly-Si) and single crystal Si(lO0) in high density (1-2 x 10fl ions/cm3), low presswe (0.510 mTorr) C12MBr-containing, helical resonator plasmas. The XPS measurements on both unmasked S...
متن کاملUnderstanding the Effect of Hydrogen Surface Passivation and Etching on the Shape of Silicon Nanocrystals
One of the significant challenges in the use of nanocrystals, is the control of crystal shape when grown from the gas-phase. Recently, the Kortshagen group has succeeded in generating cubic Si nanocrystals in a nonequilibrium plasma. In this paper we consider the energetics of various shaped Si nanocrystals, and the role that hydrogen surface termination plays. We consider cube, truncated octah...
متن کاملRapid Surface Functionalization of Hydrogen-Terminated Silicon by Alkyl Silanols
Surface functionalization of inorganic semiconductor substrates, particularly silicon, has focused attention toward many technologically important applications, involving photovoltaic energy, biosensing and catalysis. For such modification processes, oxide-free (H-terminated) silicon surfaces are highly required, and different chemical approaches have been described in the past decades. However...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Thin Solid Films
سال: 2005
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.04.121